Design Architecture, Principal Engineer

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

HBM Design Architecture — Principal Engineer

Role Overview

We are seeking a highly motivated HBM Design Architecture Engineer (Principal Engineer) to drive exploration and definition of next‑generation AI memory and system environments. In this role, you will analyze emerging infrastructure trends, build performance models, and develop/extend tooling that informs HBM architecture decisions and system‑level trade‑offs.
You will work closely with architects and senior engineers across DTPCO, Design, and Product/System teams to translate AI workload requirements into actionable memory subsystem and architectural intercept strategies.

Key Responsibilities

You will own and contribute to projects such as:

• Research and synthesize emerging trends in compute, networking, and storage infrastructure to anticipate how future AI systems will evolve.
• Lead HBM architecture analysis by defining bandwidth/latency targets, identifying constraints, and translating workload and system data into actionable memory requirements.
• Develop and maintain simulation frameworks to model AI cluster performance and memory subsystem behavior; validate models against internal and external benchmarks.
• Build and apply first‑order performance models spanning HBM bandwidth/latency, GPU/CPU interactions, and memory hierarchy trade‑offs to guide architectural decisions.
• Create and curate trend dashboards using CSP benchmarks and industry datasets; communicate insights, assumptions, and sensitivity analyses to stakeholders.
• Partner across DTPCO, Design, and Product/System teams to define architectural intercept opportunities, align on requirements, and influence roadmaps for next‑generation AI systems.

Required Qualifications

• Bachelor’s or Master’s degree in Electrical Engineering, Materials Science or related field (or equivalent practical experience).
• Strong understanding of materials and technology challenges spanning hybrid computing systems
• Experience with memory subsystem design (HBM, DDR, caches) and how memory behavior impacts AI/ML workloads and system bottlenecks.
• Strong multi-disciplinary experience in Fab & Foundry space.

Preferred Skills

• Exposure to electrical, materials challenges and advances in microelectronic manufacturing (compute, memory, interconnects).
• Ability to turn research and model outputs into concise technical recommendations, including trade‑off discussions, risk/unknowns, and roadmap implications.

About Micron Technology, Inc.

We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all. With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron® and Crucial® brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities — from the data center to the intelligent edge and across the client and mobile user experience.

To learn more, please visit micron.com/careers

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.

To request assistance with the application process and/or for reasonable accommodations, please contact at hrsupport_taiwan@micron.com.

Micron Prohibits the use of child labor and complies with all applicable laws, rules, regulations, and other international and industry labor standards.

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